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rev. 1.2, jan. 04, 2011 1 p/n: pm1470 512k-bit [x 1] 2.5v cmos serial flash features general ? serial peripheral interface compatible -- mode 0 and mode 3 ? 524,288 x 1 bit structure ? 16 equal sectors with 4k byte each - any sector can be erased individually ? single power supply operation - 2.35 to 3.6 volt for read, erase, and program operations ? latch-up protected to 100ma from -1v to vcc +1v performance ? high performance - fast access time: 50mhz serial clock - fast program time: 1.4ms(typ.) and 5ms(max.)/page (256-byte per page) - fast erase time: 60ms(typ.)/sector (4k-byte per sector) ; 1s(typ.) and 2s(max.)/chip(512kb) ? low power consumption - low active read current: 8ma(max.) at 50mhz and 4ma(max.) at 25mhz - low active programming current: 15ma (max.) - low active erase current: 15ma (max.) - low standby current: 10ua (max.) - deep power-down mode 1ua (typical) ? minimum 100,000 erase/program cycles ? 20 years of data retention software features ? input data format - 1-byte command code ? block lock protection - the bp0~bp1 status bit defnes the size of the area to be software protected against program and erase in - structions. ? auto erase and auto program algorithm - automatically erases and verifes data at selected sector - automatically programs and verifes data at selected page by an internal algorithm that automatically times the program pulse widths (any page to be programed should have page in the erased state frst). ? status register feature ? electronic identifcation - jedec 2-byte device id - res command, 1-byte device id MX25V512C http://
2 p/n: pm1470 rev. 1.2, jan. 04, 2011 MX25V512C hardware features ? sclk input - serial clock input ? si input - serial data input ? so output - serial data output ? wp# pin - hardware write protection ? hold# pin - pause the chip without diselecting the chip ? package - 8-land uson (2x3 mm, 0.6mm package height) - 8-pin tssop (173mil) - all pb-free devices are rohs compliant general description the MX25V512C is a cmos 524,288 bit serial flash memory, which is confgured as 65,536 x 8 internally. the MX25V512C features a serial peripheral interface and software protocol allowing operation on a simple 3-wire bus. the three bus signals are a clock input (sclk), a serial data input (si), and a serial data output (so). serial access to the device is enabled by cs# input. the MX25V512C provides sequential read operation on whole chip. after program/erase command is issued, auto program/ erase algorithms which program/ erase and verify the spec - ifed page or sector/block locations will be executed. program command is executed on page (256 bytes) basis, and erase command is executes on chip or sector (4k-bytes). to provide user with ease of interface, a status register is included to indicate the status of the chip. the status read command can be issued to detect completion status of a program or erase operation via wip bit. when the device is not in operation and cs# is high, it is put in standby mode and draws less than 10ua dc cur - rent. the MX25V512C utilizes macronix's proprietary memory cell, which reliably stores memory contents even after 100,000 program and erase cycles. http://
3 p/n: pm1470 rev. 1.2, jan. 04, 2011 MX25V512C contents features ................................................................................................................................................. 1 general .......................................................................................................................................................... 1 performance ............................................................................................................................................... 1 software features ................................................................................................................................... 1 hardware features ................................................................................................................................... 2 general description ........................................................................................................................ 2 pin configurations ............................................................................................................................. 8 8-land uson (2x3mm) .................................................................................................................................... 8 8-pin tssop (173mil) ....................................................................................................................................... 8 pin description ..................................................................................................................................... 8 block diagram ...................................................................................................................................... 9 data protection ................................................................................................................................. 1 0 table 1. protected area sizes .......................................................................................................................... 1 1 hold feature ........................................................................................................................................ 1 1 figure 1. hold condition operation ................................................................................................................. 1 1 table 2. command definition ................................................................................................................... 1 2 table 3. memory organization ........................................................................................................................ 1 3 device operation ............................................................................................................................... 1 3 figure 2. serial modes supported .................................................................................................................... 1 3 command description ...................................................................................................................... 1 4 (1) write enable (wren) ................................................................................................................................. 1 4 (2) write disable (wrdi) .................................................................................................................................. 1 4 (3) read identifcation (rdid) .......................................................................................................................... 1 4 (4) read status register (rdsr) .................................................................................................................... 1 5 (5) write status register (wrsr) .................................................................................................................... 1 6 table 4. protection modes ................................................................................................................................ 1 6 (6) read data bytes (read) ........................................................................................................................... 1 7 (7) read data bytes at higher speed (fast_read) ..................................................................................... 1 7 (8) sector erase (se) ....................................................................................................................................... 1 7 (9) block erase (be) ......................................................................................................................................... 1 8 (10) chip erase (ce) ........................................................................................................................................ 1 8 (11) page program (pp) ................................................................................................................................... 1 8 (12) deep power-down (dp) ............................................................................................................................ 1 9 (13) release from deep power-down (rdp), read electronic signature (res) ........................................... 1 9 (14) read electronic manufacturer id & device id (rems) ............................................................................ 2 0 power-on state .................................................................................................................................. 2 1 electrical specifications ............................................................................................................. 2 2 absolute maximum ratings ................................................................................................................... 2 2 figure 3.maximum negative overshoot waveform ......................................................................................... 2 2 capacitance ta = 25c, f = 1.0 mhz ........................................................................................................... 2 2 figure 4. maximum positive overshoot waveform .......................................................................................... 2 2 figure 5. input test waveforms and measurement level ............................................................ 2 3 figure 6. output loading ......................................................................................................................... 2 3 table 5. dc characteristics (temperature = -40c to 85c, vcc = 2.35v ~ 3.6v) ............................. 2 4 table 6. ac characteristics (temperature = -40c to 85c, vcc = 2.35v ~ 3.6v) ............................. 2 5 http://
4 p/n: pm1470 rev. 1.2, jan. 04, 2011 MX25V512C table 7. power-up timing ............................................................................................................................... 2 6 initial delivery state ............................................................................................................................... 2 6 figure 7. serial input timing ............................................................................................................................ 2 7 figure 8. output timing .................................................................................................................................... 2 7 figure 9. hold timing ....................................................................................................................................... 2 8 figure 10. wp# disable setup and hold timing during wrsr when srwd=1 ............................................. 2 8 figure 11. write enable (wren) sequence (command 06) ........................................................................... 2 9 figure 12. write disable (wrdi) sequence (command 04) ............................................................................ 2 9 figure 13. read identifcation (rdid) sequence (command 9f) .................................................................... 2 9 figure 14. read status register (rdsr) sequence (command 05) .............................................................. 3 0 figure 15. write status register (wrsr) sequence (command 01) ............................................................. 3 0 figure 16. read data bytes (read) sequence (command 03) .................................................................... 3 0 figure 17. read at higher speed (fast_read) sequence (command 0b) ................................................ 3 1 figure 18. page program (pp) sequence (command 02) .............................................................................. 3 2 figure 19. sector erase (se) sequence (command 20) ................................................................................ 3 3 figure 20. block erase (be) sequence (command 52 or d8) ........................................................................ 3 3 figure 21. chip erase (ce) sequence (command 60 or c7) ......................................................................... 3 4 figure 22. deep power-down (dp) sequence (command b9) ....................................................................... 3 4 figure 23. release from deep power-down and read electronic signature (res) sequence (command ab) ......................................................................................................................................................................... 3 4 figure 24. release from deep power-down (rdp) sequence (command ab) ............................................. 3 5 figure 25. read electronic manufacturer & device id (rems) sequence (command 90) ............................ 3 5 figure 26. power-up timing ............................................................................................................................. 3 6 operating conditions ...................................................................................................................... 3 7 figure 27. ac timing at device power-up ....................................................................................................... 3 7 figure 28. power-down sequence .................................................................................................................. 3 8 erase and programming performance ................................................................................... 3 9 latch-up characteristics ............................................................................................................. 3 9 ordering information ..................................................................................................................... 4 0 part name description .................................................................................................................... 4 1 package information ....................................................................................................................... 4 2 8-land uson (2x3 mm, 0.6mm package height) ............................................................................................. 4 2 8-pin tssop (173mil) ...................................................................................................................................... 4 3 http://
5 p/n: pm1470 rev. 1.2, jan. 04, 2011 MX25V512C figures 8-land uson (2x3mm) .................................................................................................................................... 8 8-pin tssop (173mil) ....................................................................................................................................... 8 figure 1. hold condition operation ................................................................................................................. 1 1 figure 2. serial modes supported .................................................................................................................... 1 3 figure 3.maximum negative overshoot waveform ......................................................................................... 2 2 figure 4. maximum positive overshoot waveform .......................................................................................... 2 2 figure 5. input test waveforms and measurement level ............................................................ 2 3 figure 6. output loading ......................................................................................................................... 2 3 figure 7. serial input timing ............................................................................................................................ 2 7 figure 8. output timing .................................................................................................................................... 2 7 figure 9. hold timing ....................................................................................................................................... 2 8 figure 10. wp# disable setup and hold timing during wrsr when srwd=1 ............................................. 2 8 figure 11. write enable (wren) sequence (command 06) ........................................................................... 2 9 figure 12. write disable (wrdi) sequence (command 04) ............................................................................ 2 9 figure 13. read identifcation (rdid) sequence (command 9f) .................................................................... 2 9 figure 14. read status register (rdsr) sequence (command 05) .............................................................. 3 0 figure 15. write status register (wrsr) sequence (command 01) ............................................................. 3 0 figure 16. read data bytes (read) sequence (command 03) .................................................................... 3 0 figure 17. read at higher speed (fast_read) sequence (command 0b) ................................................ 3 1 figure 18. page program (pp) sequence (command 02) .............................................................................. 3 2 figure 19. sector erase (se) sequence (command 20) ................................................................................ 3 3 figure 20. block erase (be) sequence (command 52 or d8) ........................................................................ 3 3 figure 21. chip erase (ce) sequence (command 60 or c7) ......................................................................... 3 4 figure 22. deep power-down (dp) sequence (command b9) ....................................................................... 3 4 figure 23. release from deep power-down and read electronic signature (res) sequence (command ab) ......................................................................................................................................................................... 3 4 figure 24. release from deep power-down (rdp) sequence (command ab) ............................................. 3 5 figure 25. read electronic manufacturer & device id (rems) sequence (command 90) ............................ 3 5 figure 26. power-up timing ............................................................................................................................. 3 6 figure 27. ac timing at device power-up ....................................................................................................... 3 7 figure 28. power-down sequence .................................................................................................................. 3 8 8-land uson (2x3 mm, 0.6mm package height) ............................................................................................. 4 2 8-pin tssop (173mil) ...................................................................................................................................... 4 3 http://
6 p/n: pm1470 rev. 1.2, jan. 04, 2011 MX25V512C tables table 1. protected area sizes .......................................................................................................................... 1 1 table 2. command definition ................................................................................................................... 1 2 table 3. memory organization ........................................................................................................................ 1 3 table 4. protection modes ................................................................................................................................ 1 6 absolute maximum ratings ................................................................................................................... 2 2 capacitance ta = 25c, f = 1.0 mhz ........................................................................................................... 2 2 table 5. dc characteristics (temperature = -40c to 85c, vcc = 2.35v ~ 3.6v) ............................. 2 4 table 6. ac characteristics (temperature = -40c to 85c, vcc = 2.35v ~ 3.6v) ............................. 2 5 table 7. power-up timing ............................................................................................................................... 2 6 http://
7 p/n: pm1470 rev. 1.2, jan. 04, 2011 MX25V512C pin configurations pin description 8-land uson (2x3mm) 1 2 3 4 cs# so wp# gnd 8 7 6 5 vcc hold# sclk si symbol description cs# chip select si serial data input so serial data output sclk clock input hold# hold, to pause the device without deselecting the device wp# write protection vcc + 2.5v power supply gnd ground 8-pin tssop (173mil) 1 2 3 4 cs# so wp# gnd vcc hold# sclk si 8 7 6 5 http://
8 p/n: pm1470 rev. 1.2, jan. 04, 2011 MX25V512C block diagram address generator memory array page buffer y-decoder x-decoder data register sram buffer si sclk clock generator state machine mode logic sense amplifier hv generator output buffer so cs# http://
9 p/n: pm1470 rev. 1.2, jan. 04, 2011 MX25V512C data protection the MX25V512C are designed to offer protection against accidental erasure or programming caused by spurious system level signals that may exist during power transition. during power up the device automatically resets the state machine in the standby mode. in addition, with its control register architecture, alteration of the memory con - tents only occurs after successful completion of specifc command sequences. the device also incorporates sev - eral features to prevent inadvertent write cycles resulting from vcc power-up and power-down transition or system noise. ? valid command length checking: the command length will be checked whether it is at byte base and completed on byte boundary. ? write enable (wren) command: wren command is required to set the write enable latch bit (wel) before other command to change data. the wel bit will return to reset stage under following situation: - power-up - write disable (wrdi) command completion - write status register (wrsr) command completion - page program (pp) command completion - sector erase (se) command completion - block erase (be) command completion - chip erase (ce) command completion ? software protection mode (spm): by using bp0-bp1 bits to set the part of flash protected from data change. ? hardware protection mode (hpm): by using wp# going low to prote ct the bp0-bp1 bits and srwd bit from data change. ? deep power down mode: by entering deep power down mode, the fash device also is under protected from writing all commands except release from deep power down mode command (rdp) and read electronic sig - nature command (res). http://
10 p/n: pm1470 rev. 1.2, jan. 04, 2011 MX25V512C table 1. protected area sizes hold feature hold# pin signal goes low to hold any serial communications with the device. the hold feature will not stop the operation of write status register, programming, or erasing in progress. the operation of hold requires chip select(cs#) keeping low and starts on falling edge of hold# pin signal while serial clock (sclk) signal is being low (if serial clock signal is not being low, hold operation will not start until serial clock signal being low). the hold condition ends on the rising edge of hold# pin signal while se - rial clock(sclk) signal is being low( if serial clock signal is not being low, hold operation will not end until serial clock being low), see figure 1 . the serial data output (so) is high impedance, both serial data input (si) and serial clock (sclk) are don't care during the hold operation. if chip select (cs#) drives high during hold operation, it will reset the internal logic of the device. to re-start communication with chip, the hold# must be at high and cs# must be at low. figure 1. hold condition operation status bit protect level 512b bp1 bp0 0 0 0 (none) none 0 1 1 (all) all 1 0 2 (all) all 1 1 3 (all) all hold# cs# sclk hold condition (standard) hold condition (non-standard) http://
11 p/n: pm1470 rev. 1.2, jan. 04, 2011 MX25V512C table 2. command definition (1) add=00h will output the manufacturer's id frst and add=01h will output device id frst. (2) be command may erase whole 512kb chip. (3) it is not recommended to adopt any other code which is not in the above command defnition table. command (byte) wren (write enable) wrdi (write disable) rdid (read identifcation) rdsr (read status register) wrsr (write status register) read (read data) fast read (fast read data) vw kh[ kh[ )kh[ kh[ kh[ kh[ kh[ g ug r vv:/ e e vv :/ e e rv p ,e , rr vv jv r vr vvjv ev r jrvj ev r jrvj command (byte) se(sector erase) be (block erase) (2) ce (chip erase) pp(page program) dp(deep power down) rdp (release from deep power- down) res (read electronic id) rems (read electronic manufacturer & device id) vw kh[ ru kh[ ru& kh[ kh[ kh[ kh[ kh[ kh[ g [ [ ug (1) wk fwlr wrhudvhwkh vhohfwhg vhfwru wrhudvhwkh vhohfwhg eorfn wrhudvhwkh krohfkls wrsurudp wkhvhohfwhg sdh hwhuv ghhs srhu gr prgh uhohdvh iurpghhs srhugr prgh wruhdg rxwewh hylfh, 2xwsxwwkh pdxidfwxuhu ,dgghylfh , http://
12 p/n: pm1470 rev. 1.2, jan. 04, 2011 MX25V512C device operation 1. before a command is issued, status register should be checked to ensure device is ready for the intended op - eration. 2. when incorrect command is inputted to this lsi, this lsi becomes standby mode and keeps the standby mode until next cs# falling edge. in standby mode, so pin of this lsi should be high-z. 3. when correct command is inputted to this lsi, this lsi becomes active mode and keeps the active mode until next cs# rising edge. 4. input data is latched on the rising edge of serial clock(sclk) and data shifts out on the falling edge of sclk. the difference of serial mode 0 and mode 3 is shown as figure 2 . 5. for the following instructions: rdid, rdsr, read, fast_read, res and rems the shifted-in instruction se - quence is followed by a data-out sequence. after any bit of data being shifted out, the cs# can be high. for the following instructions: wren, wrdi, wrsr, se, be, ce, pp, rdp and dp the cs# must go high exactly at the byte boundary; otherwise, the instruction will be rejected and not executed. 6. during the progress of write status register, program, erase operation, to access the memory array is neglect - ed and not affect the current operation of write status register, program, erase. figure 2. serial modes supported table 3. memory organization note: cpol indicates clock polarity of serial master: -cpol=1 for sclk high while idle -cpol=0 for sclk low while not transmitting. cpha indicates clock phase. the combination of cpol bit and cpha bit decides which serial mode is supported. sector address range 15 00f000h 00ffffh : : : 3 003000h 003fffh 2 002000h 002fffh 1 001000h 001fffh 0 000000h 000fffh sclk msb cpha shift in shift out si 0 1 cpol 0 (serial mode 0) (serial mode 3) 1 so sclk msb http://
13 p/n: pm1470 rev. 1.2, jan. 04, 2011 MX25V512C command description (1) write enable (wren) the write enable (wren) instruction is for setting write enable latch (wel) bit. for those instructions like pp, se, be, ce, and wrsr, which are intended to change the device content, should be set every time after the wren in - struction setting the wel bit. the sequence of issuing wren instruction is: cs# goes low sending wren instruction code cs# goes high. (see figure 1 1 ) (2) write disable (wrdi) the write disable (wrdi) instruction is for resetting write enable latch (wel) bit. the sequence of issuing wrdi instruction is: cs# goes low sending wrdi instruction code cs# goes high. (see figure 1 2 ) the wel bit is reset by following situations: - power-up - write disable (wrdi) instruction completion - write status register (wrsr) instruction completion - page program (pp) instruction completion - sector erase (se) instruction completion - block erase (be) instruction completion - chip erase (ce) instruction completion (3) read identifcation (rdid) the rdid instruction is for reading the manufacturer id of 1-byte and followed by device id of 2-byte. the mxic manufacturer id is c2(hex), the memory type id is 20(hex) as the frst-byte device id, and the individual device id of second-byte id is as followings: 10(hex) for MX25V512C. the sequence of issuing rdid instruction is: cs# goes low sending rdid instruction code24-bits id data out on so to end rdid operation can use cs# to high at any time during data out. (see figure. 1 3 ) while program/erase operation is in progress, it will not decode the rdid instruction, so there's no effect on the cy - cle of program/erase operation which is currently in progress. when cs# goes high, the device is at standby stage. http://
14 p/n: pm1470 rev. 1.2, jan. 04, 2011 MX25V512C (4) read status register (rdsr) the rdsr instruction is for reading status register bits. the read status register can be read at any time (even in program/erase/write status register condition) and continuously. it is recommended to check the write in progress (wip) bit before sending a new instruction when a program, erase, or write status register operation is in progress. the sequence of issuing rdsr instruction is: cs# goes lowsending rdsr instruction codestatus register data out on so (see figure. 1 4 ) the defnition of the status register bits is as below: wip bit. the write in progress (wip) bit, a volatile bit, indicates whether the device is busy in program/erase/write status register progress. when wip bit sets to 1, which means the device is busy in program/erase/write status register progress. when wip bit sets to 0, which means the device is not in progress of program/erase/write status register cycle. wel bit. the write enable latch (wel) bit, a volatile bit, indicates whether the device is set to internal write enable latch. when wel bit sets to 1, which means the internal write enable latch is set, the device can accept program/ erase/write status register instruction. when wel bit sets to 0, which means no internal write enable latch; the de - vice will not accept program/erase/write status register instruction. bp1, bp0 bits. the block protect (bp1, bp0) bits, non-volatile bits, indicate the protected area(as defned in table 1 ) of the device to against the program/erase instruction without hardware protection mode being set. to write the block protect (bp1, bp0) bits requires the write status register (wrsr) instruction to be executed. those bits defne the protected area of the memory to against page program (pp), sector erase (se), block erase (be) and chip erase(ce) instructions (only if all block protect bits set to 0, the ce instruction can be executed) srwd bit. the status register write disable (srwd) bit, non-volatile bit, is operated together with write protec - tion (wp#) pin for providing hardware protection mode. the hardware protection mode requires srwd sets to 1 and wp# pin signal is low stage. in the hardware protection mode, the write status register (wrsr) instruction is no longer accepted for execution and the srwd bit and block protect bits (bp1, bp0) are read only. notes: 1. see the table " protected area size s ". 2. the endurance cycles of protect bits are 100,000 cycles; however, the tw time out spec of protect bits is relaxed as tw = n x 15ms (n is a multiple of 10,000 cycles, ex. n = 2 for 20,000 cycles) after 10,000 cycles on those bits. bit7 bit6 bit5 bit4 bit3 bit2 bit1 bit0 srwd (status register write protect) 0 0 0 bp1 (level of protected block) bp0 (level of protected block) wel (write enable latch) wip (write in progress bit) 1=status register write disable (note 1) (note 1) 1=write enable 0=not write enable 1=write operation 0=not in write operation http://
15 p/n: pm1470 rev. 1.2, jan. 04, 2011 MX25V512C (5) write status register (wrsr) the wrsr instruction is for changing the values of status register bits. before sending wrsr instruction, the write enable (wren) instruction must be decoded and executed to set the write enable latch (wel) bit in ad - vance. the wrsr instruction can change the value of block protect (bp1, bp0) bits to defne the protected area of memory (as shown in table 1 ). the wrsr also can set or reset the status register write disable (srwd) bit in accordance with write protection (wp#) pin signal. the wrsr instruction cannot be executed once the hardware protected mode (hpm) is entered. the sequence of issuing wrsr instruction is: cs# goes low sending wrsr instruction code status register data on si cs# goes high. (see figure 1 5 ) the wrsr instruction has no effect on b6, b5, b4, b1, b0 of the status register. the cs# must go high exactly at the byte boundary; otherwise, the instruction will be rejected and not executed. the self-timed write status register cycle time (tw) is initiated as soon as chip select (cs#) goes high. the write in progress (wip) bit still can be check out during the write status register cycle is in progress. the wip sets 1 during the tw timing, and sets 0 when write status register cycle is completed, and the write enable latch (wel) bit is reset. table 4. protection modes note: as defned by the values in the block protect (bp1, bp0) bits of the status register , as shown in table 1 . as the above table showing, the summary of the software protected mode (spm) and hardware protected mode (hpm). software protected mode (spm): - when srwd bit=0, no matter wp# is low or high, the wren instruction may set the wel bit and can change the values of srwd, bp1, bp0. the protected area, which is defned by bp1, bp0, is at software protected mode (spm). - when srwd bit=1 and wp# is high, the wren instruction may set the wel bit can change the values of srwd, bp1, bp0. the protected area, which is defned by bp1, bp0, is at software protected mode (spm) note: if srwd bit=1 but wp# is low, it is impossible to write the status register even if the wel bit has previously been set. it is rejected to write the status register and not be executed. hardware protected mode (hpm): - when srwd bit=1, and then wp# is low (or wp# is low before srwd bit=1), it enters the hardware protected mode (hpm). the data of the protected area is protected by software protected mode by bp1, bp0 and hard - ware protected mode by the wp# to against data modifcation. note: to exit the hardware protected mode requires wp# driving high once the hardware protected mode is entered. if the wp# pin is permanently connected to high, the hardware protected mode can never be entered; only can use software protected mode via bp1, bp0. mode status register condition wp# and srwd bit status memory software protection mode (spm) status register can be written in (wel bit is set to "1") and the srwd, bp0-bp1 bits can be changed wp#=1 and srwd bit=0, or wp#=0 and srwd bit=0, or wp#=1 and srwd=1 the protected area cannot be program or erase. hardware protection mode (hpm) the srwd, bp0-bp1 of status register bits cannot be changed wp#=0, srwd bit=1 the protected area cannot be program or erase. http://
16 p/n: pm1470 rev. 1.2, jan. 04, 2011 MX25V512C (6) read data bytes (read) the read instruction is for reading data out. the address is latched on rising edge of sclk, and data shifts out on the falling edge of sclk at a maximum frequency fr. the frst address byte can be at any location. the address is automatically increased to the next higher address after each byte data is shifted out, so the whole memory can be read out at a single read instruction. the address counter rolls over to 0 when the highest address has been reached. the sequence of issuing read instruction is: cs# goes low sending read instruction code 3-byte address on sidata out on so to end read operation can use cs# to high at any time during data out. (see figure. 1 6 ) (7) read data bytes at higher speed (fast_read) the fast_read instruction is for quickly reading data out. the address is latched on rising edge of sclk, and data of each bit shifts out on the falling edge of sclk at a maximum frequency fc. the frst address byte can be at any location. the address is automatically increased to the next higher address after each byte data is shifted out, so the whole memory can be read out at a single fast_read instruction. the address counter rolls over to 0 when the highest address has been reached. the sequence of issuing fast_read instruction is: cs# goes low sending fast_read instruction code-> 3-byte address on si 1-dummy byte address on sidata out on so to end fast_read operation can use cs# to high at any time during data out. (see figure. 1 7 ) while program/erase/write status register cycle is in progress, fast_read instruction is rejected without any im - pact on the program/erase/write status register current cycle. (8) sector erase (se) the sector erase (se) instruction is for erasing the data of the chosen sector to be "1". a write enable (wren) in - struction must execute to set the write enable latch (wel) bit before sending the sector erase (se). any address of the sector (see table 3 ) is a valid address for sector erase (se) instruction. the cs# must go high exactly at the byte boundary (the latest eighth of address byte been latched-in); otherwise, the instruction will be rejected and not executed. address bits [am-a12] (am is the most signifcant address) select the sector address. the sequence of issuing se instruction is: cs# goes low sending se instruction code3-byte address on si cs# goes high. (see figure 1 9 ) the self-timed sector erase cycle time (tse) is initiated as soon as chip select (cs#) goes high. the write in progress (wip) bit still can be check out during the sector erase cycle is in progress. the wip sets 1 during the tse timing, and sets 0 when sector erase cycle is completed, and the write enable latch (wel) bit is reset. if the page is protected by bp1, bp0 bits, the sector erase (se) instruction will not be executed on the page. http://
17 p/n: pm1470 rev. 1.2, jan. 04, 2011 MX25V512C (9) block erase (be) the block erase (be) instruction is for erasing the data of the chosen block to be "1". a write enable (wren) in - struction must execute to set the write enable latch (wel) bit before sending the block erase (be). any address of the block (see table 3 ) is a valid address for block erase (be) instruction. the cs# must go high exactly at the byte boundary (the latest eighth of address byte been latched-in); otherwise, the instruction will be rejected and not executed. the sequence of issuing be instruction is: cs# goes low sending be instruction code 3-byte address on si cs# goes high. (see figure 2 0 ) the self-timed block erase cycle time (tbe) is initiated as soon as chip select (cs#) goes high. the write in progress (wip) bit still can be check out during the sector erase cycle is in progress. the wip sets 1 during the tbe timing, and sets 0 when sector erase cycle is completed, and the write enable latch (wel) bit is reset. if the page is protected by bp1, bp0 bits, the block erase (be) instruction will not be executed on the page. (10) chip erase (ce) the chip erase (ce) instruction is for erasing the data of the whole chip to be "1". a write enable (wren) instruc - tion must execute to set the write enable latch (wel) bit before sending the chip erase (ce). any address of the sector (see table 3 ) is a valid address for chip erase (ce) instruction. the cs# must go high exactly at the byte boundary( the latest eighth of address byte been latched-in); otherwise, the instruction will be rejected and not ex - ecuted. the sequence of issuing ce instruction is: cs# goes low sending ce instruction codecs# goes high. (see fig - ure 2 1 ) the self-timed chip erase cycle time (tce) is initiated as soon as chip select (cs#) goes high. the write in progress (wip) bit still can be check out during the chip erase cycle is in progress. the wip sets 1 during the tce timing, and sets 0 when chip erase cycle is completed, and the write enable latch (wel) bit is reset. if the chip is protected by bp1, bp0 bits, the chip erase (ce) instruction will not be executed. it will be only executed when bp1, bp0 all set to "0". (11) page program (pp) the page program (pp) instruction is for programming the memory to be "0". a write enable (wren) instruction must execute to set the write enable latch (wel) bit before sending the page program (pp). if the eight least sig - nifcant address bits (a7-a0) are not all 0, all transmitted data which goes beyond the end of the current page are programmed from the start address if the same page (from the address whose 8 least signifcant address bits (a7- a0) are all 0). the cs# must keep during the whole page program cycle. the cs# must go high exactly at the byte boundary( the latest eighth of address byte been latched-in); otherwise, the instruction will be rejected and not executed. if more than 256 bytes are sent to the device, the data of the last 256-byte is programmed at the request page and previous data will be disregarded. if less than 256 bytes are sent to the device, the data is programmed at the request address of the page without effect on other address of the same page. the sequence of issuing pp instruction is: cs# goes low sending pp instruction code 3-byte address on si at least 1-byte on data on si cs# goes high. (see figure 1 8 ) the self-timed page program cycle time (tpp) is initiated as soon as chip select (cs#) goes high. the write in progress (wip) bit still can be check out during the page program cycle is in progress. the wip sets 1 during the tpp timing, and sets 0 when page program cycle is completed, and the write enable latch (wel) bit is reset. if the page is protected by bp1, bp0 bits, the page program (pp) instruction will not be executed. http://
18 p/n: pm1470 rev. 1.2, jan. 04, 2011 MX25V512C (12) deep power-down (dp) the deep power-down (dp) instruction is for setting the device on the minimizing the power consumption (to enter - ing the deep power-down mode), the standby current is reduced from isb1 to isb2). the deep power-down mode requires the deep power-down (dp) instruction to enter, during the deep power-down mode, the device is not ac - tive and all write/program/erase instruction are ignored. when cs# goes high, it's only in standby mode not deep power-down mode. it's different from standby mode. the sequence of issuing dp instruction is: cs# goes low sending dp instruction code cs# goes high. (see fig - ure 2 2 ) once the dp instruction is set, all instruction will be ignored except the release from deep power-down mode (rdp) and read electronic signature (res) instruction. (res instruction to allow the id been read out). when power- down, the deep power-down mode automatically stops, and when power-up, the device automatically is in standby mode. for rdp instruction the cs# must go high exactly at the byte boundary (the latest eighth bit of instruction code been latched-in); otherwise, the instruction will not executed. as soon as chip select (cs#) goes high, a delay of tdp is required before entering the deep power-down mode and reducing the current to isb2. (13) release from deep power-down (rdp), read electronic signature (res) the release from deep power-down (rdp) instruction is terminated by driving chip select (cs#) high. when chip select (cs#) is driven high, the device is put in the stand-by power mode. if the device was not previously in the deep power-down mode, the transition to the stand-by power mode is immediate. if the device was previously in the deep power-down mode, though, the transition to the stand-by power mode is delayed by tres2, and chip select (cs#) must remain high for at least tres2(max), as specifed in table 6 . once in the stand-by power mode, the device waits to be selected, so that it can receive, decode and execute instructions. res instruction is for reading out the old style of 8-bit electronic signature, whose values are shown as table of id defnition s . this is not the same as rdid instruction. it is not recommended to use for new design. for new deisng, please use rdid instruction. even in deep power-down mode, th e rdp and res are also allowed to be executed, only except the device is in progress of program/erase/write cycle; there's no effect on the current program/erase/ write cycle in progress. the sequence is shown as figure 2 3 , figure 2 4 . the res instruction is ended by cs# goes high after the id been read out at least once. the id outputs repeat - edly if continuously send the additional clock cycles on sclk while cs# is at low. if the device was not previously in deep power-down mode, the device transition to standby mode is immediate. if the device was previously in deep power-down mode, there's a delay of tres2 to transit to standby mode, and cs# must remain to high at least tres2(max). once in the standby mode, the device waits to be selected, so it can be receive, decode, and execute instruction. the rdp instruction is for releasing from deep power down mode. http://
19 p/n: pm1470 rev. 1.2, jan. 04, 2011 MX25V512C (14) read electronic manufacturer id & device id (rems) the rems instruction is an alternative to the release from power-down/device id instruction that provides both the jedec assigned manufacturer id and the specifc device id. the rems instruction is very similar to the release from power-down/device id instruction. the instruction is initi - ated by driving the cs# pin low and shift the instruction code "90h" followed by two dummy bytes and one bytes address (a7~a0). after which, the manufacturer id for mxic (c2h) and the device id are shifted out on the falling edge of sclk with most signifcant bit (msb) frst as shown in fgure 2 5 . the device id values are listed in table of id defnition s on page 19. if the one-byte address is initially set to 01h, then the device id will be read frst and then followed by the manufacturer id. the manufacturer and device ids can be read continuously, alternating from one to the other. the instruction is completed by driving cs# high. table of i hlwlrv rdid command manufacturer id memory type memory density c2 20 10 res command electronic id 05 rems command manufacturer id device id c2 05 http://
20 p/n: pm1470 rev. 1.2, jan. 04, 2011 MX25V512C power-on state the device is at below states when power-up: - standby mode (please note it is not deep power-down mode) - write enable latch (wel) bit is reset the device must not be selected during power-up and power-down stage unless the vcc achieves below correct level: - vcc minimum at power-up stage and then after a delay of tvsl - gnd at power-down please note that a pull-up resistor on cs# may ensure a safe and proper power-up/down level. please refer to table 7. power-up timin g . an internal power-on reset (por) circuit may protect the device from data corruption and inadvertent data change during power up state. for further protection on the device, if the vcc does not reach the vcc minimum level, the correct operation is not guaranteed. the read, write, erase, and program command should be sent after the below time delay: tvsl after vcc reached vcc minimum level. the device can accept read command after vcc reached vcc minimum and a time delay of tvsl. please refer to the fgure of " power-up timin g ". note: to stabilize the vcc level, the vcc rail decoupled by a suitable capacitor close to package pins is recom - mended.(generally around 0.1uf) http://
21 p/n: pm1470 rev. 1.2, jan. 04, 2011 MX25V512C notice: 1. stresses greater than those listed under absolute maximum ratings may cause permanent damage to the device. this is stress rating only and functional operational sections of this specifcation is not implied. exposure to absolute maximum rating conditions for extended period may affect reliability . 2. specifcations contained within the following tables are subject to change. 3. during voltage transitions, all pins may overshoot to 4.6v or -0.5v for period up to 20ns. 4. all input and output pins may overshoot to vcc+0.5v while vcc+0.5v is smaller than or equal to 4.6v. absolute maximum ratings electrical specifications capacitance ta = 25c, f = 1.0 mhz figure 3.maximum negative overshoot waveform figure 4. maximum positive overshoot waveform rating value ambient operating temperature industrial grade -40c to 85c storage temperature -65c to 150c applied input voltage -0.5v to 4.6v applied output voltage -0.5v to 4.6v vcc to ground potential -0.5v to 4.6v 0v -0.5v 20ns 4.6v 3.6v 20ns symbol parameter min. typ max. unit conditions cin input capacitance 6 pf vin = 0v cout output capacitance 8 pf vout = 0v http://
22 p/n: pm1470 rev. 1.2, jan. 04, 2011 MX25V512C figure 5. input test waveforms and measurement level figure 6. output loading ac measurement level input timing referance level output timing referance level 0.8vcc 0.7vcc 0.3vcc 0.5vcc 0.2vcc note: input pulse rise and fall time are <5ns device under test diodes=in3064 or equivalent cl 6.2k ohm 2.7k ohm +3.3v cl=30pf including jig capacitance http://
23 p/n: pm1470 rev. 1.2, jan. 04, 2011 MX25V512C table 5. dc characteristics (temperature = -40c to 85c, vcc = 2.35v ~ 3.6v) notes : 1. typical values at vcc = 2.5v, t = 25 c. these currents are valid for all product versions (package and speeds). 2. typical value is calculated by simulation. 3. not 100% tested. symbol parameter notes min. typ. max. units test conditions ili input load current 1 2 ua vcc = vcc max vin = vcc or gnd ilo output leakage current 1 2 ua vcc = vcc max vin = vcc or gnd isb1 vcc standby current 1 10 ua vin = vcc or gnd cs#=vcc isb2 deep power-down current 1 5 ua vin = vcc or gnd cs#=vcc icc1 vcc read 1 8 ma f=50mhz sclk=0.1vcc/0.9vcc, so=open 4 ma f=25mhz sclk=0.1vcc/0.9vcc, so=open icc2 vcc program current (pp) 1 15 ma program in progress cs#=vcc icc3 vcc write status register (wrsr) current 15 ma program status register in progress cs#=vcc icc4 vcc sector erase current (se) 1 15 ma erase in progress cs#=vcc icc5 vcc chip erase current (ce) 1 15 ma erase in progress cs#=vcc vil input low voltage -0.5 0.3vcc v vih input high voltage 0.7vcc vcc+0.4 v vol output low voltage 0.4 v iol = 1.6ma voh output high voltage vcc-0.2 v ioh = -100ua vwi low vcc write inhibit voltage 3 1.95 2.15 2.35 v http://
24 p/n: pm1470 rev. 1.2, jan. 04, 2011 MX25V512C table 6. ac characteristics (temperature = -40c to 85c, vcc = 2.35v ~ 3.6v) notes: 1. tch + tcl must be greater than or equal to 1/ fc (fc or fr). 2. value guaranteed by characterization, not 100% tested in production. 3. expressed as a slew-rate. 4. only applicable as a constraint for a wrsr instruction when sr wd is set at 1. 5. test condition is shown as figure 5 . 6. tw = n x 15ms (n is a multiple of 10k cycles) symbol alt. parameter min. typ. max. unit fsclk fc clock frequency for the following instructions: fast_read, pp, se, be, ce, dp, res,rdp wren, wrdi, rdid, rdsr, wrsr 1khz 50 mhz frsclk fr clock frequency for read instructions 1khz 25 mhz tch(1) tclh clock high time fc=50mhz 8 ns fr=25mhz 16 ns tcl(1) tcll clock low time fc=50mhz 8 ns fr=25mhz 16 ns tclch(2) clock rise time (3) (peak to peak) 0.1 v/ns tchcl(2) clock fall time (3) (peak to peak) 0.1 v/ns tslch tcss cs# active setup time (relative to sclk) 8 ns tchsl cs# not active hold time (relative to sclk) 8 ns tdvch tdsu data in setup time 2 ns tchdx tdh data in hold time 5 ns tchsh cs# active hold time (relative to sclk) 5 ns tshch cs# not active setup time (relative to sclk) 5 ns tshsl tcsh cs# deselect time 100 ns tshqz(2) tdis output disable time 6 ns tclqv tv clock low to output valid loading: 30pf 11 ns loading: 15pf 9 ns tclqx tho output hold time 0 ns thlch hold# setup time (relative to sclk) 5 ns tchhh hold# hold time (relative to sclk) 5 ns thhch hold setup time (relative to sclk) 5 ns tchhl hold hold time (relative to sclk) 5 ns thhqx(2) tlz hold to output low-z 6 ns thlqz(2) thz hold# to output high-z 6 ns twhsl(4) write protect setup time 20 ns tshwl(4) write protect hold time 100 ns tdp(2) cs# high to deep power-down mode 3 us tres1(2) cs# high to standby mode without electronic signature read 3 us tres2(2) cs# high to standby mode with electronic signature read 1.8 us tw (6) write status register cycle time 10 150 ms tpp page program cycle time 1.4 5 ms tse sector erase cycle time 60 ms tbe block erase cycle time 1 2 s tce chip erase cycle time 1 2 s http://
25 p/n: pm1470 rev. 1.2, jan. 04, 2011 MX25V512C initial delivery state the device is delivered with the memory array erased: all bits are set to 1 (each byte contains ffh). the status register contains 00h (all status register bits are 0). note: 1. the parameter is characterized only. table 7. power-up timing symbol parameter min. max. unit tvsl(1) vcc(min) to cs# low 10 us http://
26 p/n: pm1470 rev. 1.2, jan. 04, 2011 MX25V512C figure 7. serial input timing figure 8. output timing lsb addr.lsb in tshqz tch tcl tclqx tclqv tclqv sclk so cs# si sclk si cs# msb so tdvch high-z lsb tslch tchdx tchcl tclch tshch tshsl tchsh tchsl http://
27 p/n: pm1470 rev. 1.2, jan. 04, 2011 MX25V512C figure 9. hold timing * si is "don't care" during hold operation. figure 10. wp# disable setup and hold timing during wrsr when srwd=1 tchhl thlch thhch tchhh thhqx thlqz sclk so cs# hold# high-z 01 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 twhsl tshwl sclk si cs# wp# so http://
28 p/n: pm1470 rev. 1.2, jan. 04, 2011 MX25V512C figure 11. write enable (wren) sequence (command 06) figure 12. write disable (wrdi) sequence (command 04) figure 13. read identifcation (rdid) sequence (command 9f) 2 1 34567 high-z 0 06 command sclk si cs# so 2 1 34567 high-z 0 04 command sclk si cs# so 2 1 3456789 10 11 12 13 14 15 command 0 manufacturer identification high-z msb 15 14 13 3210 device identification msb 7 6 5 3 2 1 0 16 17 18 28 29 30 31 sclk si cs# so 9f http://
29 p/n: pm1470 rev. 1.2, jan. 04, 2011 MX25V512C figure 14. read status register (rdsr) sequence (command 05) figure 15. write status register (wrsr) sequence (command 01) figure 16. read data bytes (read) sequence (command 03) 2 1 3456789 10 11 12 13 14 15 command 0 7 6543210 status register out high-z msb 7 6543210 status register out msb 7 sclk si cs# so 05 2 1 345678 9 10 11 12 13 14 15 status register in 0 76543 2 0 1 msb sclk si cs# so 01 high-z command sclk si cs# so 23 2 1 3456789 10 28 29 30 31 32 33 34 35 22 21 3210 36 37 38 76543 1 7 0 data out 1 24-bit address 0 msb msb 2 39 data out 2 03 high-z command http://
30 p/n: pm1470 rev. 1.2, jan. 04, 2011 MX25V512C figure 17. read at higher speed (fast_read) sequence (command 0b) 23 2 1 3456789 10 28 29 30 31 22 21 3210 high-z 24 bit address 0 32 33 34 36 37 38 39 40 41 42 43 44 45 46 765432 0 1 data out 1 dummy byte msb 7 6543210 data out 2 msb msb 7 47 765432 0 1 35 sclk si cs# so sclk si cs# so 0b command http://
31 p/n: pm1470 rev. 1.2, jan. 04, 2011 MX25V512C figure 18. page program (pp) sequence (command 02) 42 41 43 44 45 46 47 48 49 50 52 53 54 55 40 23 2 1 3456789 10 28 29 30 31 32 33 34 35 22 21 3210 36 37 38 24-bit address 0 765432 0 1 data byte 1 39 51 765432 0 1 data byte 2 765432 0 1 data byte 3 data byte 256 2079 2078 2077 2076 2075 2074 2073 765432 0 1 2072 msb msb msb msb msb sclk cs# si sclk cs# si 02 command http://
32 p/n: pm1470 rev. 1.2, jan. 04, 2011 MX25V512C figure 19. sector erase (se) sequence (command 20) note: se command is 20(hex). figure 20. block erase (be) sequence (command 52 or d8) note: be command is 52 or d8(hex). 24 bit address 2 1 3456789 29 30 31 0 23 22 2 1 0 msb sclk cs# si 20 command 24 bit address 2 1 3456789 29 30 31 0 23 22 2 0 1 msb sclk cs# si 52 or d8 command http://
33 p/n: pm1470 rev. 1.2, jan. 04, 2011 MX25V512C figure 21. chip erase (ce) sequence (command 60 or c7) figure 22. deep power-down (dp) sequence (command b9) figure 23. release from deep power-down and read electronic signature (res) sequence (command ab) note: ce command is 60(hex) or c7(hex). 2 1 34567 0 60 or c7 sclk si cs# command 2 1 34567 0 t dp deep power-down mode stand-by mode sclk cs# si b9 command 23 2 1 3456789 10 28 29 30 31 32 33 34 35 22 21 3210 36 37 38 765432 0 1 high-z electronic signature out 3 dummy bytes 0 msb stand-by mode deep power-down mode msb t res2 sclk cs# si so ab command http://
34 p/n: pm1470 rev. 1.2, jan. 04, 2011 MX25V512C notes: (1) add=00h will output the manufacturer's id frst and add=01h will output device id frst figure 24. release from deep power-down (rdp) sequence (command ab) figure 25. read electronic manufacturer & device id (rems) sequence (command 90) 2 1 34567 0 t res1 stand-by mode deep power-down mode high-z sclk cs# si so ab command 15 14 13 3 2 1 0 2 1 3456789 10 2 dummy bytes 0 32 33 34 36 37 38 39 40 41 42 43 44 45 46 765432 0 1 manufacturer id add (1) msb 7 6543210 device id msb msb 7 47 765432 0 1 35 31 30 29 28 sclk si cs# so sclk si cs# so x 90 high-z command http://
35 p/n: pm1470 rev. 1.2, jan. 04, 2011 MX25V512C figure 26. power-up timing v cc v cc (min) chip selection is not allowed tvsl time device is fully accessible v cc (max) http://
36 p/n: pm1470 rev. 1.2, jan. 04, 2011 MX25V512C notes : 1. sampled, not 100% tested. 2. for ac spec tchsl, tslch, tdvch, tchdx, tshsl, tchsh, tshch, tchcl, tclch in the fgure, please refer to " ac characteristic s " table. symbol parameter notes min. max. unit tvr vcc rise time 1 0.5 500000 us/v operating conditions at device power-up and power-down ac timing illustrated in figure 2 7 and figure 2 8 are for the supply voltages and the control signals at device power- up and power-down. if the timing in the fgures is ignored, the device will not operate correctly . during power-up and power-down, cs# needs to follow the voltage applied on vcc to keep the device not to be selected. the cs# can be driven low when vcc reach vcc(min.) and wait a period of tvsl. figure 27. ac timing at device power-up sclk si cs# vcc msb in so tdvch high impedance lsb in tslch tchdx tchcl tclch tshch tshsl tchsh tchsl tvr vcc(min) gnd http://
37 p/n: pm1470 rev. 1.2, jan. 04, 2011 MX25V512C c s # sclk v c c figure 28. power-down sequence during power-down, cs# needs to follow the voltage drop on vcc to avoid mis-operation. http://
38 p/n: pm1470 rev. 1.2, jan. 04, 2011 MX25V512C erase and programming performance notes: 1. typical program and erase time assumes the following conditions: 25 c, 2.5v, and checker board pattern. 2. under worst conditions of 85 c and 2.35v. 3. system-level overhead is the time required to execute the frst-bus-cycle sequence for the programming com - mand. 4. write status register cycle time tw=n x 15ms (n is a multiple of 10k cycles). latch-up characteristics parameter min. typ. (1) max. (2) unit write status register cycle time (4) 10 150 ms sector erase time 60 ms block erase time 1 2 s chip erase time 1 2 s page program time 1.4 5 ms erase/program cycle 100,000 cycles min. max. input voltage with respect to gnd on acc -1.0v 12.5v input voltage with respect to gnd on all power pins, si, cs# -1.0v 2 vccmax input voltage with respect to gnd on so -1.0v vcc + 1.0v current -100ma +100ma includes all pins except vcc. test conditions: vcc = 3.0v, one pin at a time. data retention parameter condition min. max. unit data retention 55?c 20 years http://
39 p/n: pm1470 rev. 1.2, jan. 04, 2011 MX25V512C ordering information part no. clock (mhz) operating current max. (ma) standby current max. (ua) temperature package remark MX25V512Czui-20g 50 8 10 -40~85c 8-uson (2x3mm) rohs compliant MX25V512Coi-20g 50 8 10 -40~85c 8-tssop (173mil) rohs compliant http://
40 p/n: pm1470 rev. 1.2, jan. 04, 2011 MX25V512C part name description mx 25 v 20 zu i g option : g: rohs compliant speed: 20: 50mhz tempera ture range: i: industr ial(-4 0 c to 85 c) p a cka ge: zu: 2x3mm 8-uson o : 173mil 8-tssop density & mode : 512c : 512kb type: v : 2.5v device: 25: ser ial flash 512c http://
41 p/n: pm1470 rev. 1.2, jan. 04, 2011 MX25V512C package information 8-land uson (2x3 mm, 0.6mm package height) http://
42 p/n: pm1470 rev. 1.2, jan. 04, 2011 MX25V512C 8-pin tssop (173mil) http://
43 p/n: pm1470 rev. 1.2, jan. 04, 2011 MX25V512C revision history revision no. description page date 1.0 1. removed "advanced information" title p1 jul/21/2009 2. added "low vcc write inhibit" voltage (vwi ) parameter p19 3. revised data retentio n from 10 years to 20 years p1 4. removed sector erase maximum timing p1,20,33 5. added data retentio n table p33 1.1 1. added 8-tssop package information p2,3,35,36, may/20/2010 p38 2. revised storage temperatur e p17 3. modifed figure 8 & figure 1 9 p22,28 4. modifed figure 27. ac timing at device power-u p p32 5. added figure 28. power-down sequenc e p33 1.2 1. removed "advanced information" from 173 mil 8-tssop package p2,7,39-40 jan/04/2011 2. redefned write status register cycle time with tw=n x 15ms formula. p24,38 3. updated vw i spec p23 http://
MX25V512C 44 macronix's products are not designed, manufactured, or intended for use for any high risk applications in which the failure of a single component could cause death, personal injury, severe physical damage, or other substan - tial harm to persons or property, such as life-support systems, high temperature automotive, medical, aircraft and military application. macronix and its suppliers will not be liable to you and/or any third party for any claims, injuries or damages that may be incurred due to use of macronix's products in the prohibited applications. copyright? macronix international co., ltd. 2008~2011. all rights reserved. macronix, mxic, mxic logo, mx logo, are trademarks or registered trademarks of macronix international co., ltd.. the names and brands of other companies are for identifcation purposes only and may be claimed as the property of the respective companies. for the contact and order information, please visit macronixs web site at: http://www.macronix.com macronix international co., ltd. reserves the right to change product and specifcations without notice. http://

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